esda6v8 a v 6 http://www.willsemi.com page 1 2/2/2008 rev2.0 esda6v8 a v 6 transient voltage suppressors for esd protection description: the esda6v8av6 array is 5-line esd transient voltage suppressor which provides a very high level of protection for sensitive electronic components that may be subjected to electrostatic discharge (esd). these devices clamp the voltage just above the logic level supply for positive transient, and to a diode drop below ground for negative transients. the esda6v8 a v6 safely dissipates esd strikes of 20 kv, exceeding the maximum requirement of the iec 61000-4-2 international standard. using the milstd-883 (method 3015) specification for human body model (hbm) esd, the device provides protection for contact discharges to greater than 16 kv. the esda6v8av6 is available in a sot-563 smt package with working voltages of 5 volt. http://www.willsemi.com specification features: z working peak reverse voltage: 5 v z low leakage current: <1ua@3v z high esd protection level: >20kv per hbm z iec61000- 4- 2 level 4 esd protection z iec61000- 4- 4 level 4 eft protection z f ive separate unidirectional configurations mechanical characteristics z void free, transfer-molded, thermosetting plastic case z corrosion resistant finish, easily solderable z small packaging applications z cell phone handsets and accessories z personal digital assistants (pda's) z notebooks, desktops, and servers z portable instrumentation z digital cameras z peripherals z mp3 players sot ? 5 6 3 6 4 1 2 3 xx m xx = specific device code m = date code marking diagram ordering information 5 device package shipping esda6v8av6-6/tr sot-563 3000 tape & reel low junction capacitance
esda6v8 a v 6 http://www.willsemi.com page 2 2/2/2008 rev2.0 absolute maximum rating rating symbol value units peak pulse power(tp=8/20us) ppp 20 w maximum peak pulse current(tp=8/20us) ipp 1.6 a esd per iec 61000-4-2 (air) esd per iec 61000-4-2 (contact) vpp 20 16 kv maximum lead temperature for soldering during 10s tl 260 o c storage temperature range tstg -55~+150 o c operating temperature range top -55~+125 o c electrical parameter symbol parameter i pp maximum reverse peak pulse current v c clamping voltage @ i pp v rwm working peak reverse voltage i r maximum reverse leakage current @ v rwm i t test current v br breakdown voltage @ i t i f forward current v f forward voltage @ i f v i v c v br v r w m i f v f i r i pp
esda6v8av6 http://www.willsemi.com page 3 2/2/2008 rev2.0 electrical characteristics (t=25 o c, device for 5.0v working peak reverse voltage) note1: surge current waveform per figure 1. typical characteristics figure 1. pulse waveform t, time ( s) 30 15 10 5 0 percent of i pp 25 20 90 80 70 60 50 40 30 20 10 0 100 110 waveform parameters t r = 8 s t d = 20 s t d = i pp /2 c ? t 0 10 20 30 40 50 60 70 80 90 100 110 0 25 50 75 100 125 150 ambient temperature - t a ( o c) % of rated power or i pp figure 2. power derating curve 0.01 0.1 1 10 0.1 1 10 100 1000 pulse duration - tp ( p s) peak pulse power - p pp (kw) non-repetitive peak pulse power vs. pulse time 2 4 6 8 10 012345 reverse voltage - v r (v) capacitance - c j (pf) junction capacitance vs. reverse voltage figure 3. figure 4. conditions minimum typical maximum unit i r v rwm =5v 0.5 ua v f i f = -10ma -0.4 -0.8 -1.25 v v br i t =1ma 6.2 6.8 7.2 v i pp =1a, tp = 8/20us, note1 1 2 v v c i pp =1.6a, tp = 8/20us, note1 14.4 v c pin1 to 2 v r = 0v, f = 1mhz 9 pf
esda6v8av6 http://www.willsemi.com page4 2/2/2008 rev2.0 package mechanical data 1.35 0.0531 0.5 0.0197 mm in c he s sca l e 20 : 1 0.5 0.0197 1.0 0.0394 0.45 0.0177 0.3 0.0118 g d 6 5 pl c j dim a min max min max inches 1.50 1.70 0.059 0.067 millimeters b 1.10 1.30 0.043 0.051 c 0.50 0.60 0.020 0.024 d 0.17 0.27 0.007 0.011 g 0.50 bsc 0.020 bsc j 0.08 0.18 0.003 0.007 k s a b 12 3 4 5 s k 0.004 0.012 0.059 0.067 0.10 0.30 1.50 1.70 6 so l d e ring f oot p rint st yl e 6 : pin 1 . cat h o d e 2 . ano d e 3 . cat h o d e 4 . cat h o d e 5 . cat h o d e 6 . cat h o d e
|
